JPH0644112Y2 - 半導体圧力センサ - Google Patents
半導体圧力センサInfo
- Publication number
- JPH0644112Y2 JPH0644112Y2 JP3943287U JP3943287U JPH0644112Y2 JP H0644112 Y2 JPH0644112 Y2 JP H0644112Y2 JP 3943287 U JP3943287 U JP 3943287U JP 3943287 U JP3943287 U JP 3943287U JP H0644112 Y2 JPH0644112 Y2 JP H0644112Y2
- Authority
- JP
- Japan
- Prior art keywords
- type
- piezoresistive element
- pressure sensor
- polycrystalline silicon
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005247 gettering Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3943287U JPH0644112Y2 (ja) | 1987-03-18 | 1987-03-18 | 半導体圧力センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3943287U JPH0644112Y2 (ja) | 1987-03-18 | 1987-03-18 | 半導体圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63147846U JPS63147846U (en]) | 1988-09-29 |
JPH0644112Y2 true JPH0644112Y2 (ja) | 1994-11-14 |
Family
ID=30852593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3943287U Expired - Lifetime JPH0644112Y2 (ja) | 1987-03-18 | 1987-03-18 | 半導体圧力センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0644112Y2 (en]) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4749790B2 (ja) * | 2004-08-20 | 2011-08-17 | 佐々木 実 | マイクロミラーデバイスとその製造方法、マイクロミラーデバイスの角度計測方法、およびマイクロミラーデバイス応用装置 |
JP5151281B2 (ja) * | 2007-07-11 | 2013-02-27 | 富士電機株式会社 | 半導体圧力センサ |
WO2017073207A1 (ja) * | 2015-10-28 | 2017-05-04 | 株式会社フジクラ | 半導体圧力センサ |
JP6431505B2 (ja) * | 2015-10-28 | 2018-11-28 | 株式会社フジクラ | 半導体圧力センサ |
-
1987
- 1987-03-18 JP JP3943287U patent/JPH0644112Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63147846U (en]) | 1988-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4771639A (en) | Semiconductor pressure sensor | |
EP2746799B1 (en) | Semiconductor magnetic field sensors | |
US4908682A (en) | Power MOSFET having a current sensing element of high accuracy | |
US5627398A (en) | Hall-effect sensor incorporated in a CMOS integrated circuit | |
JP2816635B2 (ja) | 半導体圧力センサ | |
US4213140A (en) | Insulated-gate semiconductor device | |
JPH0517703B2 (en]) | ||
JPH0644112Y2 (ja) | 半導体圧力センサ | |
US4884116A (en) | Double diffused mosfet with potential biases | |
KR100221440B1 (ko) | 용량성 소자를 갖는 반도체 장치 | |
US20050186697A1 (en) | Fabrication method of an ion sensitive field effect transistor | |
US6489658B2 (en) | MOS-transistor for a photo cell | |
JP2586432B2 (ja) | 半導体圧力センサの製造方法 | |
RU2127007C1 (ru) | Магниточувствительный биполярный транзистор | |
EP0162165A2 (en) | A Hall effect device and method for fabricating such a device | |
JP2002162303A (ja) | 圧力センサ | |
JPH05198846A (ja) | 温度感知装置およびこの装置を用いる温度感知回路 | |
US6984817B2 (en) | CMOS-type photodetector for improved charge transfer from the photodetector to a MOS transistor | |
JP2988020B2 (ja) | 半導体イオンセンサ | |
JP2002190575A (ja) | 半導体装置およびその製造方法 | |
TW200401448A (en) | Bipolar transistor and semiconductor device using the same | |
JP4318934B2 (ja) | 温度センサ | |
JP3070118B2 (ja) | 半導体加速度センサ | |
JP3534176B2 (ja) | 半導体センサ | |
JPS61123172A (ja) | 固体撮像装置 |